开设网络赌场怎么量刑-网络赌场危害

Challenge conventions.

A continuous quest for a better world.

Awards

Researcher ZHANG Lijie from the College of Chemistry and Materials Engineering Publishes Academic Paper in "Nature Nanotechnology", Sub-journal of Nature

Release time: 2023-10-17

Two-dimensional materials possess novel physical properties such as atomic-level thickness, excellent electronic transport, and optoelectronic characteristics. They serve as ideal platforms for the development of high-performance electronic and optoelectronic devices, potentially extending the traditional silicon-based semiconductor industry based on "Moore's Law" and further enhancing chip transistor integration density. However, the process temperatures required for producing high-quality two-dimensional materials are generally higher than the temperature limits of standard semiconductor CMOS (complementary metal-oxide-semiconductor) chip fabrication processes, significantly restricting the integration of two-dimensional materials with silicon-based integrated circuits. Although integration of two-dimensional materials can be achieved through additional mechanical transfer processes, the samples produced using mechanical transfer methods are challenging to control in terms of product morphology and size, are time-consuming and inefficient, and often introduce chemical impurities at material interfaces, leading to a noticeable decline in material performance and hindering scalable applications. Therefore, achieving low-temperature direct growth of high-quality two-dimensional materials is an ideal solution to promote their practical applications in the semiconductor field.

Recently, researcher ZHANG Lijie and colleagues from our institute addressed the temperature constraints faced in the integration of two-dimensional materials, heterostructures, and semiconductor chip monolithic integration. They first developed a van der Waals substrate-assisted low-temperature epitaxial growth strategy for the controllable growth of a series of two-dimensional metal iodides (PbI2, CdI2, BiI3, CuI) at relatively low temperatures. Combined with theoretical calculations, they elucidated the impact of diffusion barriers on the growth of two-dimensional iodides, providing strategies and theoretical guidance for low-temperature growth of high-quality two-dimensional materials. This research achievement was published in the prestigious international academic journal "Advanced Functional Materials" in the field of materials.

Building upon this foundation, Researcher ZHANG Lijie and team designed a universal van der Waals substrate-assisted low-temperature in-situ substitution growth method for two-dimensional metal iodides. They successfully achieved ultra-low-temperature controllable growth (≤ 400°C) of 17 high-quality two-dimensional metal chalcogenides and their heterostructures. Combining theoretical calculations, they elucidated the mechanism of ultra-low-temperature in-situ substitution growth, revealing the microscopic essence of sulfur element replacing iodine element with low substitution barriers. Moreover, they achieved large-area array integration of various two-dimensional materials and their heterostructures at temperatures below 400°C. This research offers a feasible solution for the temperature compatibility issue in the backend manufacturing process of two-dimensional materials and semiconductor chips and provides a new approach for the monolithic integration of two-dimensional materials and their heterostructures. The research paper titled "Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides" was published in  Nature Nanotechnology sub-journal of Nature, with Wenzhou University as the joint corresponding unit. Researcher Zhang Lijie from  College of Chemistry and Materials Engineering, Lain-Jong LI from the University of Hong Kong, Zhengtang LUO from the Hong Kong University of Science and Technology, and Shaoming HUANG from Guangdong University of Technology are the joint corresponding authors. Young faculty member ZHAO Mei from College of Chemistry and Materials Engineering is the joint first author.



2024-03-04

WZU Education Majors Achieve Sixth Place Nationwide in the 9th "Tian Jiabing Cup" National Teaching Skills Competition From December 29th to 31st, the finals of the 9th "Tian Jiabing Cup" National Teaching Skills Competition for education majors were held at Zhejiang Normal University. A total of 1611 participants from 226 universities nationwide competed in this event, with 10 participants from our university. They achieved 4 first prizes, 1 second prize, and 5 third prizes, ranking sixth in the nation for the number ...

2023-10-17

Researcher ZHANG Lijie from the College of Chemistry and Materials Engineering Publishes Academic Paper in "Nature Nanotechnology", Sub-journal of Nature Two-dimensional materials possess novel physical properties such as atomic-level thickness, excellent electronic transport, and optoelectronic characteristics. They serve as ideal platforms for the development of high-performance electronic and optoelectronic devices, potentially extending the traditional silicon-based semiconductor industry based on "Moore's Law" and further enhancing chip tra...

Contact Us

International Relations Office, Wenzhou University

Postal Address: 6th Floor, Administrative Building, South Campus, Wenzhou University, Chashan University Town, Wenzhou City, Zhejiang Province, China 325035

Tel: 0086-577-86680971 86598029

Fax: 0086-577-86598029

E-mail: fao@wzu.edu.cn

Stay Connected

威尼斯人娱乐网上百家乐| 沐川县| 百家乐单人操作扫描道具| 承德县| 百家乐游戏开户网址| 百家乐官网中的小路怎样| 临高县| 大发888娱乐场下载删除| 澳门百家乐威尼斯| 百家乐官网黑牌靴| 大发888游乐场| 百家乐官网桌子租| 百家乐官网平台是最好的娱乐城| 大发8881| 太阳城百家乐手机投注| 上市百家乐官网评论| 昆山市| 大发888游戏平台 df888ylcxz46| 网上百家乐导航| 百家乐官网游戏作弊| 南康市| 大发888充值平台| 赌场百家乐作弊| 打百家乐庄闲的技巧| 优博百家乐现金网| 网上百家乐官网的赌博网站| OK娱乐城| 高额德州扑克视频| 太阳城ktv| 百家乐加牌规| 百家乐平台有什么优惠| 百家乐太阳城怎么样| 百家乐官网赢钱面面观| 玩网上百家乐官网的技巧 | 百家乐解析| 百家乐群sun811| 百家乐视频游戏聊天| 菲律宾百家乐的说法| 百家乐玩家技巧分享| 太阳城百家乐主页| 百家乐娱乐备用网址|